IN-SITU ELLIPSOMETRY ON SPUTTERED DIELECTRIC AND MAGNETOOPTIC THIN-FILMS

A four-gun magnetron sputtering chamber incorporating in-situ real-tim e spectroscopic ellipsometric analysis was used to grow magnetooptic m emory structures. Data were taken at 44 wavelengths simultaneously fro m 410 nm to 750 nm, allowing the study of SiC/TbFeCo/SiC depositions o n quartz in real time. These data were used to determine the sputter r ates, optical constants, and the thicknesses of the films. The SiC dat a were taken at 1 min time intervals during growth, and the TbFeCo dep osition was monitored continuously. Data were taken during the deposit ion of the entire structure without subjecting the sample to destructi ve analysis techniques or an oxidizing or reactive atmosphere.