Nanocrystalline diamond films have been deposited using a microwave pl
asma consisting of argon, 2-10% hydrogen and a carbon precursor such a
s C-60 or CH4. it was found that it is possible to grow the diamond ph
ase with both carbon precursors, although the hydrogen concentration i
n the plasma was 1-2 orders of magnitude lower than normally required
in the absence of the argon. Auger electron spectroscopy, X-ray diffra
ction measurements and transmission electron microscopy indicate the f
ilms are predominantly composed of diamond. Surface roughness, as dete
rmined by atomic force microscopy and scanning electron microscopy ind
icate the nanocrystalline films grown in low hydrogen content plasmas
are exceptionally smooth (30-50 nm rms) to thicknesses of 10 m. The sm
ooth nanocrystalline films result in low friction coefficients (mu = 0
.04-0.06) and low average wear rates as determined by bail-on-disk mea
surements.