INTEGRATION OF COPPER MULTILEVEL INTERCONNECTS WITH OXIDE AND POLYMERINTERLEVEL DIELECTRICS

Copper interconnect structures are being evaluated for 0.25 mu m minim um feature size technology and below. This work focuses on fabrication of one- and two-level test structures with copper metallization and b oth oxide and polymer interlevel dielectrics to demonstrate the compat ibility of unit processes being developed for future copper-based inte rconnects. Emphasis is placed on dual Damascene patterning and materia l and process compatibility with such patterning and the required barr iers and passivation techniques required with copper. Future direction s of this work are described in this invited review paper.