0.10 MU-M TISI2 TECHNOLOGY UTILIZING NITROGEN DIFFUSION-CONTROLLED RTA

Authors
MATSUBARA Y SAKAI T ISHIGAMI T ANDO K HORIUCHI T
Citation
Y. Matsubara et al., 0.10 MU-M TISI2 TECHNOLOGY UTILIZING NITROGEN DIFFUSION-CONTROLLED RTA, Thin solid films, 270(1-2), 1995, pp. 537-543
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
270
Issue
1-2
Year of publication
1995
Pages
537 - 543
Database
ISI
SICI code
0040-6090(1995)270:1-2<537:0MTTUN>2.0.ZU;2-4
Abstract
The effects of Ti film thickness and rapid thermal annealing (RTA) amb ient on the properties of narrow TiSi2 lines were studied. Decreasing the Ti film thickness improves the critical line width of silicidation . Excessive nitridation suppresses the silicidation at Ti film thickne ss thinner than 30 nm in atmosphere N-2 RTA. Using a low-pressure N-2 RTA process (30 mTorr), a 0.10 mu m line width with low resistivity wa s accomplished at the Ti film thickness of 20 nm without lateral overg rowth.