HETEROEPITAXIAL SI1-X-YGEXCY FILMS ON (100)SI SUBSTRATES FOR FUTURE LOW-POWER APPLICATIONS

Thin heteroepitaxial films of Si1-x-yGexCy have been investigated for potential use in low-power electronic applications, Films were grown o n (100)Si substrates using atmospheric pressure chemical vapor deposit ion at 625 and 700 degrees C. The crystallinity, composition and micro structure of the SiGeC films were characterized using Rutherford backs cattering spectrometry and secondary ion mass spectrometry. The crysta llinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. Si1-x-yGexCy films with up to 2.0 at.% C and 2 0 at.% Ge were epitaxial with good crystallinity. Current-voltage meas urements were obtained from the electrical characterization of Si1-x-y GexCy/Si heterojunction diodes. Stable layers and low diode turn-on vo ltage make the Si1-x-yGexCy/Si structure an appropriate candidate for future low-power research.