A SUBSTRATE CURRENT MODEL FOR ANALOG CMOS CIRCUIT SIMULATIONS

This paper presents an accurate and semi-physical MOSFET substrate cur rent model suitable for analog circuit simulations. The proposed model is valid over a wide range of the electric field present in MOSFET de vices and is continuous from cut off region to saturation region. The developed model was implemented into the circuit simulator, SPICE3. Be nchmark of the developed model was achieved by making comparisons betw een the measured data and the simulated data for MOSFET devices, push- pull CMOS inverters, a regulated cascode CMOS operational amplifier. T he experimental results showed that the developed model was more accur ate and computationally efficient than the conventional models.