CHARACTERIZATION OF SI(100) SPUTTERED WITH LOW-ENERGY ARGON

Authors
HUANG LJ LAU WM MITCHELL IV TANG HT LENNARD WN
Citation
Lj. Huang et al., CHARACTERIZATION OF SI(100) SPUTTERED WITH LOW-ENERGY ARGON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 34-37
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
106
Issue
1-4
Year of publication
1995
Pages
34 - 37
Database
ISI
SICI code
0168-583X(1995)106:1-4<34:COSSWL>2.0.ZU;2-G
Abstract
The near surface structure of low energy (0.5-1.5 keV) argon bombarded Si(100) was characterized using medium energy ion scattering and high resolution X-ray photoemission spectroscopy. The ion induced lattice damage, distribution and redistribution of incorporated argon and sili con carbide formed during the dynamic mixing process are directly and non-destructively measured and depth-profiled in the sub-nanometre sca le. The results capture many details of low energy ion interaction wit h Si in the near surface and address the capability for direct and non -destructive characterization of such interactions in the sub-nanometr e scale.