Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF (100)-AXIAL-CHANNELED HE IONS IN SI CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 51-54
Measurements of the electronic stopping power of He2+ ions along the [
100] direction in Si crystal with energies ranging between 200 keV and
4.5 MeV are presented. The Rutherford backscattering technique has be
en used with SIMOX samples consisting of a Si single-crystal layer on
top of a buried layer of 500 nm SiO2 built into a Si (100) wafer.