ELECTRONIC STOPPING POWER OF (100)-AXIAL-CHANNELED HE IONS IN SI CRYSTALS

Authors
DOSSANTOS JHR GRANDE PL BOUDINOV H BEHAR M STOLL R KLATT C KALBITZER S
Citation
Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF (100)-AXIAL-CHANNELED HE IONS IN SI CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 51-54
Citations number
23
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
106
Issue
1-4
Year of publication
1995
Pages
51 - 54
Database
ISI
SICI code
0168-583X(1995)106:1-4<51:ESPO(H>2.0.ZU;2-M
Abstract
Measurements of the electronic stopping power of He2+ ions along the [ 100] direction in Si crystal with energies ranging between 200 keV and 4.5 MeV are presented. The Rutherford backscattering technique has be en used with SIMOX samples consisting of a Si single-crystal layer on top of a buried layer of 500 nm SiO2 built into a Si (100) wafer.