K. Baba et al., SYNTHESIS AND CORROSION PROPERTIES OF SILICON-NITRIDE FILMS BY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 106-109
Silicon nitride films SiNx were deposited on 316L austenitic stainless
steel substrates by silicon evaporation and simultaneous nitrogen ion
irradiation with an acceleration voltage of 2 kV. In order to study t
he influence of the nitrogen content on changes in stoichiometry, stru
cture, morphology, thermal oxidation behaviour and corrosion behaviour
, the atom to ion transport ratio was systematically varied. The chang
es of binding states and the stoichiometry were evaluated with XPS and
AES analysis. A maximum nitrogen content was reached with a Si/N tran
sport ratio lower than 2. The films are chemically inert when exposed
to laboratory atmosphere up to a temperature of more than 1000 degrees
C, XRD and SEM measurements show amorphous and featureless films for
transport ratios Si/N from 1 up to 10, The variation of the corrosion
behaviour of coated stainless steel substrates in sulphuric acid and h
ydrochloric acid shows a minimum at medium transport ratios. This goes
parallel with changes in porosity and adhesion. Additional investigat
ions showed that titanium implantation as an intermediate step improve
s the corrosion resistance considerably.