ION-BEAM-ASSISTED DEPOSITION OF ZRO2 THIN-FILMS

Microstructure and properties of thin films can be modified by ion bea m irradiation during growth. The stoichiometry, density, crystallinity , and texture of ZrO2 films deposited under ion beam impact on glassy carbon and silicon single crystals were investigated. Argon ion beams with an energy of 10 keV and a current density of 40 mu A/cm(2) were u sed during electron beam evaporation of ZrO2 pellets with a rate of 0. 25 nm/s. The angle between substrate normal and ion beam was set at 0 degrees, 15 degrees and 55 degrees. Stoichiometry of the films was ana lyzed by Rutherford backscattering spectroscopy (RES). Film density wa s calculated from combined RES analysis and thickness measurements by profilometer and spectrophotometer. Phase content, crystallinity, and texture were investigated by X-ray diffraction (XRD), four pole measur ements and high resolution transmission electron microscopy (HRTEM). I nfluence of the angle of incidence of ions on texture will be discusse d.