THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN ION-IMPLANTED SI

The residual damage in Si has been studied after ion implantation and annealing at elevated temperatures. The residual electrical and struct ural damage has been measured with capacitance-voltage, deep level tra nsient spectroscopy and transmission electron microscopy. A correlatio n between the observable structural damage and the electrically active defects was observed. A critical dose is determined, below which no s tructural and electrically active defects are found. This dose is char acterised for different implantation temperatures and implantation ene rgies and therefore as a function of the initial damage present after implantation. Also discussed is the critical dose as a function of ann ealing parameters. The observed electrical compensation of the backgro und concentration is found to be a result of neutral donor complexes a nd deep accepters.