ION MASS DEPENDENCE OF NORMALIZED REGROWTH RATE IN MEV ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION

Authors
KINOMURA A CHAYAHARA A HORINO Y MOKUNO Y FUJII K
Citation
A. Kinomura et al., ION MASS DEPENDENCE OF NORMALIZED REGROWTH RATE IN MEV ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 277-280
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
106
Issue
1-4
Year of publication
1995
Pages
277 - 280
Database
ISI
SICI code
0168-583X(1995)106:1-4<277:IMDONR>2.0.ZU;2-Y
Abstract
Regrowth rates normalized by nuclear energy deposition in MeV ion beam induced epitaxial crystallization were investigated for five kinds of ions (C-Au) at the beam energies of 1.5 and 5.6 MeV. An amorphous lay er formed on crystalline silicon was recrystallized by ion beam irradi ation at the temperature of 350 degrees C with the dose rate of 2x10(1 2) ions/cm(2) s, The regrowth rate increased with decreasing ion mass and increasing beam energy. The regrowth rates of carbon ions were 4.3 and 6.7 times higher than those of gold ions for the beam energies of 1.5 and 5.6 MeV, respectively.