TEMPERATURE AND DOSE DEPENDENCE OF DAMAGE PRODUCTION IN SI+ AND SE+ IMPLANTED INP

The damage evolution in Si+ implanted InP was investigated in the temp erature region between 80 and 393 K by means of the RES/channelling te chnique. Up to the implantation temperature T-I approximate to 363 K, the damage concentration increases continuously with the ion fluence u p to a critical fluence above which amorphous layers are formed. In th is temperature region, amorphization is achieved by overlap and succes sive accumulation of heavily damaged and amorphous clusters. Above a c ritical temperature at or near 400 K, the mechanisms change markedly. Over a broad range of fluences (less than or equal to 5X10(15) cm(-2)) the enhanced mobility of point defects leads to dissociation of the p rimarily produced damage cascades and no amorphization is observed. Ma inly point defects and point defect complexes are created at these low fluences, however, amorphization does occur in a narrow very high dos e region (10(16) cm(-2)) by a collapse-like transition. A similar beha viour was also found for Se+ implantation with a critical temperature of about 430 K.