E. Wendler et al., TEMPERATURE AND DOSE DEPENDENCE OF DAMAGE PRODUCTION IN SI+ AND SE+ IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 303-307
The damage evolution in Si+ implanted InP was investigated in the temp
erature region between 80 and 393 K by means of the RES/channelling te
chnique. Up to the implantation temperature T-I approximate to 363 K,
the damage concentration increases continuously with the ion fluence u
p to a critical fluence above which amorphous layers are formed. In th
is temperature region, amorphization is achieved by overlap and succes
sive accumulation of heavily damaged and amorphous clusters. Above a c
ritical temperature at or near 400 K, the mechanisms change markedly.
Over a broad range of fluences (less than or equal to 5X10(15) cm(-2))
the enhanced mobility of point defects leads to dissociation of the p
rimarily produced damage cascades and no amorphization is observed. Ma
inly point defects and point defect complexes are created at these low
fluences, however, amorphization does occur in a narrow very high dos
e region (10(16) cm(-2)) by a collapse-like transition. A similar beha
viour was also found for Se+ implantation with a critical temperature
of about 430 K.