ION-IMPLANTATION DAMAGE OF INP AND INGAAS

The damage accumulation and annealing processes in ion bombarded InP a nd InGaAs have been studied. Epitaxial InGaAs layers on (100) oriented InP and InP crystals were implanted with O-16 ions to produce a R(p) of 0.5 mu m in each material for ion doses from 10(13) to 2X10(16) cm( -2), implant temperature from 80 to 373 K, and beam flux from 0.01 to 1.8 mu A cm(-2). The retained damage following implantation was analyz ed by the Rutherford backscattering/channeling technique. The results show that the response of each material to O ion bombardment is widely different for all implantation temperatures. Within the flux range st udied, amorphous layers can be formed in InP at all temperatures up to 373 K for O-16 fluences greater than or equal to 5X10(14) cm(-2). Str ong dynamic defect annealing precludes amorphization of InGaAs at 290 K for O doses up to 5X10(15) cm(-2) and beam flux up to 1.8 mu A cm(-2 ).