RECRYSTALLIZATION OF RELAXED SIGE ALLOY LAYERS

Recrystallisation of amorphous Si1-xGex alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and ti me resolved reflectivity (TRR). Arrhenius behaviour was observed for t he crystallisation velocity and the corresponding activation energy wa s extracted over the complete composition range (x = 0.0 to x=1.0). Co ntrary to expectations, the activation energy did not exhibit a monoto nic dependence on Ge concentration but was found to increase above tha t of Si for Ge concentrations in the range from x similar to 0.10 to s imilar to 0.40. The observed increase in activation energy is explaine d by an energy term caused by the difference in the actual bond-length and the natural bond-length.