T. Bachmann et al., ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION AND INTERFACIAL AMORPHIZATION AT AMORPHOUS-CRYSTALLINE INTERFACES IN GERMANIUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 350-354
[100] and [111]-Ge single crystals were preamorphized in a thin surfac
e layer using 50 keV or 85 keV N+ ions. Ion beam induced epitaxial cry
stallization (IBIEC) and interfacial amorphization (IBIIA) at the amor
phous/crystalline interface were studied using different kinds of high
energy ion beams. The crystallization rate for the [100]-Ge is about
1.5 times higher than that for [111]-Ge. The total recrystallised thic
kness depends mainly on the nuclear energy deposition and the irradiat
ion temperature. Interfacial amorphization is detected in Ge for the f
irst time. Cross section TEM micrographs show a sharp amorphous/crysta
lline interface for both IBIEC and IBIIA. The fit of the experimental
data yields an activation energy of 0.82 eV for IBIEC and 1.16 eV for
IBIIA.