ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION AND INTERFACIAL AMORPHIZATION AT AMORPHOUS-CRYSTALLINE INTERFACES IN GERMANIUM

[100] and [111]-Ge single crystals were preamorphized in a thin surfac e layer using 50 keV or 85 keV N+ ions. Ion beam induced epitaxial cry stallization (IBIEC) and interfacial amorphization (IBIIA) at the amor phous/crystalline interface were studied using different kinds of high energy ion beams. The crystallization rate for the [100]-Ge is about 1.5 times higher than that for [111]-Ge. The total recrystallised thic kness depends mainly on the nuclear energy deposition and the irradiat ion temperature. Interfacial amorphization is detected in Ge for the f irst time. Cross section TEM micrographs show a sharp amorphous/crysta lline interface for both IBIEC and IBIIA. The fit of the experimental data yields an activation energy of 0.82 eV for IBIEC and 1.16 eV for IBIIA.