BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL LASER STRUCTURES USING HIGH-ENERGY ION-IMPLANTATION

Ion implantation induced Quantum Well (QW) intermixing using high ener gies (2 to 8 MeV As+ and P+) has been shown to be an effective techniq ue for achieving spatially selective tuning of QW laser structures (In GaAs/GaAs and InGaAs/InP). Work illustrating the effects of ion dose, energy, current density and implant temperature is presented for the I nGaAs/GaAs QW laser structure, using photoluminescence as a diagnostic tool to help optimise these parameters. This work is then extended to the InGaAs/InP QW laser structure where significant differences are o bserved, in particular concerning the ion implantation depth relative to the depth of the QWs.