OPTICAL INTEGRATION OF LATERALLY MODIFIED MULTIPLE-QUANTUM-WELL STRUCTURES BY IMPLANTATION ENHANCED INTERMIXING TO REALIZE GAIN-COUPLED DFBLASERS

We report on the realization of gain coupled distributed feedback (GC- DFB) lasers using masked implantation enhanced intermixing (MIEI) in a full planar technology. The process requires only planar epitaxy step s to minimize ion straggling. We present a detailed investigation on t he integration processing steps as implantation, subsequent annealing and regrowth with InP (MOCVD). We also discuss critical technology ste ps. Surface morphology depends very sensitive on implantation and anne aling. Nonradiative recombination caused by defects leads to high loss es in optical devices. We achieve good results for an AsH3 stabilized annealing step in a MOCVD equipment, compared to rapid thermal anneali ng (RTA), which proceeds as the second epitaxial step. Photoluminescen ce (PL) studies show the excellent interface quality. High homogeneity and small linewidth after the integration process indicate sufficient quality to realize electrical gain coupled DFB-laser devices by IEI.