OPTICAL ACTIVATION OF ER3-IMPLANTED WITH CARBON( IN SILICON CO)

Authors
UEKUSA S SHIMAZU K MAJIMA A YABUTA K
Citation
S. Uekusa et al., OPTICAL ACTIVATION OF ER3-IMPLANTED WITH CARBON( IN SILICON CO), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 477-479
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
106
Issue
1-4
Year of publication
1995
Pages
477 - 479
Database
ISI
SICI code
0168-583X(1995)106:1-4<477:OAOEWC>2.0.ZU;2-6
Abstract
Erbium (Er) and carbon (C) ions are co-implanted into Czochralski-grow n silicon. The photoluminescence (PL) intensity of 1.54 mu m Er3+ emis sion from Si:Er with C is 2-4 times stronger than that of Si:Er. The P L spectra of Si:Er with C (for doses of 1x10(13) and 1 X 10(14) cm(-2) ) are composed of many peaks. These peaks are due to the luminescence from C-Er complex centers. The temperature dependence of the Er3+-rela ted PL shows three quenching processes. Their activation energies are 4, 12 and 140 meV, respectively.