THE EFFECT OF A POSTTREATMENT OF AMORPHOUS-CARBON FILMS WITH HIGH-ENERGY ION-BEAMS

Authors
KOLITSCH A RICHTER E DRUMMER H ROLAND U ULLMANN J
Citation
A. Kolitsch et al., THE EFFECT OF A POSTTREATMENT OF AMORPHOUS-CARBON FILMS WITH HIGH-ENERGY ION-BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 511-516
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
106
Issue
1-4
Year of publication
1995
Pages
511 - 516
Database
ISI
SICI code
0168-583X(1995)106:1-4<511:TEOAPO>2.0.ZU;2-W
Abstract
Hard amorphous carbon films prepared by ion beam assisted deposition o n silicon wafers were investigated before and after modification by 20 keV carbon ion beams of different fluences ranging from 10(13) to 10( 18) carbon ions per cm(2). The characterization of the as-deposited an d post-treated films compares changes of the microstructure by Raman s pectroscopy and changes of mechanical properties as the ultra-microhar dness and electrical resistivity. The results show fluency-dependent e ffects of all measured properties. A strong correlation of the effects was found between electrical resistivity and microhardness.