THE SUBSTITUTIONALITY OF HAFNIUM IN SAPPHIRE BY ION-IMPLANTATION AND LOW-TEMPERATURE ANNEALING

Authors
MARQUES JG MELO AA SOARES JC ALVES E DASILVA MF FREITAG K
Citation
Jg. Marques et al., THE SUBSTITUTIONALITY OF HAFNIUM IN SAPPHIRE BY ION-IMPLANTATION AND LOW-TEMPERATURE ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 602-605
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
106
Issue
1-4
Year of publication
1995
Pages
602 - 605
Database
ISI
SICI code
0168-583X(1995)106:1-4<602:TSOHIS>2.0.ZU;2-2
Abstract
Hafnium was implanted into sapphire at room temperature to a dose of 5 x 10(14) atoms/cm(2). The lattice location of Hf was studied by RBS/c hanneling and the recovery of isolated point defects was studied by hy perfine interactions. It is shown that after implantation Hf is substi tutional in the Al sites and the lattice recovery of the point defects created during the implantation is achieved by furnace annealing at 3 50 and 550 degrees C.