CROSS-SECTIONAL RAMAN MICROSCOPY OF MEV IMPLANTED DIAMOND

The defect structures created in diamond by MeV He ion implantation ar e studied using Raman microscopy. The diamond was irradiated edge on, and the micro-Raman spectra were collected in a direction perpendicula r to the implantation direction. This 'cross-sectional' geometry allow ed the Raman spectrum of the damage to be resolved as a function of de pth from the ion implanted surface. Both the position and the FWHM of the first order Raman mode at 1332 cm(-1) were found to scale linearly with dose; a result readily interpretable as defect induced strain in the implanted layer. The measurements thus provide the depth profile of ion implanted damage in MeV irradiated diamond, and allow a direct test of the accuracy of theoretical models, such as TRIM, for the asse ssment of damage in ion irradiated diamond.