MOLECULAR-BEAM EPITAXY-GROWN SEPARATE-CONFINEMENT BURIED HETEROSTRUCTURE PBEUSETE-PBTE DIODE-LASERS

Separate confinement buried heterostructure (SCBH) tunable PbEuSeTe-Pb Te diode lasers were fabricated by molecular beam epitaxy for the firs t time, Continuous wave (CW) operating temperature of 215 K was realiz ed, which is the highest CW operating temperature ever reported for le ad-chalcogenide diode lasers. Preliminary results show a significant i mprovement in threshold current and emission power, Exceptionally low threshold currents of 2.5 mA at 120 K, 76 mA at 180 K, and 252 mA at 2 00 K were measured, The temperature tuning range of the SCBH diode las er spans between 6.49 mu m at 20 K to 4.19 mu m at 215 K.