PROPERTIES OF THE HETEROJUNCTION BETWEEN POLY(DITHIENOPYRROLE)-POLY(VINYLCHLORIDE) COMPOSITE AND N-DOPED SILICON

Authors
CAMPOS M CAMAIONI N CASALBOREMICELI G GERI A GIRO G ZINI Q
Citation
M. Campos et al., PROPERTIES OF THE HETEROJUNCTION BETWEEN POLY(DITHIENOPYRROLE)-POLY(VINYLCHLORIDE) COMPOSITE AND N-DOPED SILICON, Synthetic metals, 75(1), 1995, pp. 61-64
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
75
Issue
1
Year of publication
1995
Pages
61 - 64
Database
ISI
SICI code
0379-6779(1995)75:1<61:POTHBP>2.0.ZU;2-P
Abstract
Using the temperature dependence of the forward-biased current-voltage characteristics as well as capacitance-voltage measurements, we calcu lated the contact barrier height of the heterojunction between poly( d ithienopyrrole) -poly(vinylchloride) composite and n-Si. Analysis of t he characteristics suggests that thermionic emission over the composit e/inorganic contact barrier dominates at low current densities, wherea s at high current densities the process is dominated by the series res istance. Very good reproducibility was observed for the junction chara cteristics.