MEASUREMENTS OF REVERSE AND FORWARD BIAS ABSORPTION AND GAIN SPECTRA IN SEMICONDUCTOR-LASER MATERIAL

Authors
MCDOUGALL SD IRONSIDE CN
Citation
Sd. Mcdougall et Cn. Ironside, MEASUREMENTS OF REVERSE AND FORWARD BIAS ABSORPTION AND GAIN SPECTRA IN SEMICONDUCTOR-LASER MATERIAL, Electronics Letters, 31(25), 1995, pp. 2179-2181
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
25
Year of publication
1995
Pages
2179 - 2181
Database
ISI
SICI code
0013-5194(1995)31:25<2179:MORAFB>2.0.ZU;2-O
Abstract
A simple technique for measuring absorption and gain spectra under rev erse and forward bias in a two section semiconductor laser is describe d. Results are presented for an AlGaAs/GaAs multiquantum well laser. F or reverse bias, exciton broadening and shifting are observed; and for forward bias, relative gain spectra are measured.