SUBMILLIAMP THRESHOLD 1.3-MU-M STRAINED MQW LASERS WITH NOVEL P-SUBSTRATE BURIED-HETEROSTRUCTURE GROWN BY MOVPE USING TBA AND TBP

Authors
TERAKADO T TSURUOKA K ISHIDA T NAKAMURA T FUKUSHIMA K AE S UDA A TORIKAI T UJI T
Citation
T. Terakado et al., SUBMILLIAMP THRESHOLD 1.3-MU-M STRAINED MQW LASERS WITH NOVEL P-SUBSTRATE BURIED-HETEROSTRUCTURE GROWN BY MOVPE USING TBA AND TBP, Electronics Letters, 31(25), 1995, pp. 2182-2184
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
25
Year of publication
1995
Pages
2182 - 2184
Database
ISI
SICI code
0013-5194(1995)31:25<2182:ST1SML>2.0.ZU;2-G
Abstract
An extremely low 0.4mA threshold current has been achieved for novel c urrent-blocking 1.3 mu m strained MQW laser diodes. These devices are grown by MOVPE using tertiarybutylarsine (TBA) and tertiarybutylphosph ine (TBP) precursors. The lowest threshold currents of 0.4 and 3.0mA w ere obtained at 20 and 85 degrees C, respectively, for a 150 mu m-long 95%/98%-coated device.