2.2V OPERATION POWER HETEROJUNCTION FET FOR PERSONAL DIGITAL CELLULARTELEPHONES

Authors
IWATA N INOSAKO K KUZUHARA M
Citation
N. Iwata et al., 2.2V OPERATION POWER HETEROJUNCTION FET FOR PERSONAL DIGITAL CELLULARTELEPHONES, Electronics Letters, 31(25), 1995, pp. 2213-2215
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
25
Year of publication
1995
Pages
2213 - 2215
Database
ISI
SICI code
0013-5194(1995)31:25<2213:2OPHFF>2.0.ZU;2-#
Abstract
The authors describe the 950MHz power performance of a 2.2V operation double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET(HJFET) for person al digital cellular telephones. The fabricated HJFET exhibited 600mA/m m maximum drain current, 260mS/mm transconductance and 9.4V gate-to-dr ain breakdown voltage. A 21mm gate-periphery device operating with a d rain bias of 2.2V, demonstrated 1.86W (32.7dBm) output power and 62.8% power-added efficiency with -50.5dBc adjacent channel leakage power a t 50kHz off-centre frequency.