FABRICATION OF 200 NM FIELD-EFFECT TRANSISTOR BY X-RAY-LITHOGRAPHY WITH A LASER-PLASMA X-RAY SOURCE

The critical dimensions required for 1Gbit semiconductor technology wi ll be beyond the capabilities of optical lithography. The laser-genera ted plasma X-ray source provides an alternative to synchrotron radiati on for lithography, providing a quasi point source of radiation at sim ilar to 1nm wavelength. The 180nm lithography required for 1Gbit has b een demonstrated by exposure of a novel commercial resist using a labo ratory prototype plasma X-ray source. A MOSFET with 200nm gate length has been produced using the new technology in mix-and-match with conve ntional methods. The device shows good electrical characteristics, dem onstrating the promise of this approach.