C. Dubuc et al., LOW-TEMPERATURE LOW-PRESSURE MOCVD ALXGA1-XAS LAYER GROWN AS A DIELECTRIC FOR GAAS MIS DEVICES, Electronics Letters, 31(25), 1995, pp. 2219-2220
An oxygen doped AlxGa1-xAs layer is demonstrated as a dielectric for G
aAs MIS structures. This layer is MOCVD grown at 550 degrees C with an
operating pressure of 10torr. By keeping the aluminium content low, i
t is possible to obtain a dielectric with relatively high resistivity
and very good interface quality.