LOW-TEMPERATURE LOW-PRESSURE MOCVD ALXGA1-XAS LAYER GROWN AS A DIELECTRIC FOR GAAS MIS DEVICES

Authors
DUBUC C BEAUVAIS J AKTIK C
Citation
C. Dubuc et al., LOW-TEMPERATURE LOW-PRESSURE MOCVD ALXGA1-XAS LAYER GROWN AS A DIELECTRIC FOR GAAS MIS DEVICES, Electronics Letters, 31(25), 1995, pp. 2219-2220
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
25
Year of publication
1995
Pages
2219 - 2220
Database
ISI
SICI code
0013-5194(1995)31:25<2219:LLMALG>2.0.ZU;2-Z
Abstract
An oxygen doped AlxGa1-xAs layer is demonstrated as a dielectric for G aAs MIS structures. This layer is MOCVD grown at 550 degrees C with an operating pressure of 10torr. By keeping the aluminium content low, i t is possible to obtain a dielectric with relatively high resistivity and very good interface quality.