PREPARATION OF PZT FERROELECTRIC THIN-FILMS BY SOL-GEL PROCESSING ANDTHEIR PROPERTIES

Crack-free and homogeneous compact ceramic and epitaxial lead zirconat e titanate (PZT) ferroelectric thin films with perovskite structure ha ve been prepared by sol-gel processing. Tetrabutyl titanate, lead acet ate and zirconium nitrate are used as raw materials. Glacial acetic ac id is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of the thin films are 600-900 deg rees C. The values of the remanent polarization P-r and the coercive h eld E(c) of the Pb(Zr0.5Ti0.5)O-3 ceramic thin films are 20 mu C cm(-2 ) and 40 kV cm(-1), respectively, at 1 kHz. The dielectric constant an d the loss tangent are about 600 and 0.02, respectively, at room tempe rature and 1 kHz.