SELF-TRAPPING PROCESS OF EXCITON IN C-60

Citation
Gp. Zhang et al., SELF-TRAPPING PROCESS OF EXCITON IN C-60, Chinese Physics Letters, 12(11), 1995, pp. 665-668
Citations number
16
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
12
Issue
11
Year of publication
1995
Pages
665 - 668
Database
ISI
SICI code
0256-307X(1995)12:11<665:SPOEIC>2.0.ZU;2-X
Abstract
A dynamical scheme is employed to simulate the self-trapping of the ex citon in C-60. During the self-trapping process, due to the bond disto rtion, two gap states Al-1u and A(2u) are separated from the highest o ccupied molecular orbital and the lowest unoccupied molecular orbital respectively From the evolutions of the bond distortion and these two levels the relaxation time of the self-trapping exciton is about 90 fs . It is noticed that the relaxation of the exciton is much quicker tha n that of the charge transfer in C-60.