PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX

Authors
LI W WANG ZG LIANG JB XU B ZHU ZP YUAN ZL LI J
Citation
W. Li et al., PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX, Chinese Physics Letters, 12(11), 1995, pp. 697-700
Citations number
7
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
12
Issue
11
Year of publication
1995
Pages
697 - 700
Database
ISI
SICI code
0256-307X(1995)12:11<697:PSOSSI>2.0.ZU;2-K
Abstract
We report a detailed analysis of optical properties of single submonol ayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localizat ion of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submono layer InAs/GaAs structures.