PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX

Citation
W. Li et al., PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX, Chinese Physics Letters, 12(11), 1995, pp. 697-700
Citations number
7
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
12
Issue
11
Year of publication
1995
Pages
697 - 700
Database
ISI
SICI code
0256-307X(1995)12:11<697:PSOSSI>2.0.ZU;2-K
Abstract
We report a detailed analysis of optical properties of single submonol ayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localizat ion of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submono layer InAs/GaAs structures.