W. Li et al., PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX, Chinese Physics Letters, 12(11), 1995, pp. 697-700
We report a detailed analysis of optical properties of single submonol
ayer InAs structures grown on GaAs (001) matrix. It is shown that the
formation of InAs dots with 1 monolayer (ML) height leads to localizat
ion of exciton under certain submonolayer InAs coverage, which play a
key role in the highly improved luminescence efficiency of the submono
layer InAs/GaAs structures.