THE ENERGETICS OF (113) STACKING-FAULT FORMATION IN SI FROM SUPERSATURATED INTERSTITIALS

Using a Tersoff-type empirical potential energy function, the free ene rgy of formation for {113}-type stacking faults in silicon has been ca lculated both as a function of stacking fault rod length and width at a variety of temperatures. A particular tetrahedral-tetrahedral dimer has the lowest free energy of formation at 0 K and this type of stacki ng fault forms an assemblage of such dimers. The free energy of format ion per interstitial in a ribbon fault decreases with ribbon width, ri bbon length, and increase of temperature. (C) 1996 American Institute of Physics.