GROWTH AND CHARACTERIZATION OF ALINGAN QUATERNARY ALLOYS

We report on the deposition of Al(y)In(x)Gal(1-x-y)N in the (0<y<0.15) and (0<x<0.14) composition range by metalorganic chemical vapor depos ition. AlInGaN quaternary alloys offer lattice-matched platform for In GaN-based light emitting heterostructure devices. Epitaxial growth of AlInGaN on (0001) sapphire substrates has been achieved at 750 degrees C. Alloy composition, lattice constants, and band gaps were obtained by energy dispersive spectroscopy, x-ray diffraction, and room tempera ture FL. Band edge emissions dominate the PL spectra of these quaterna ry films. Preliminary data suggest that the lattice constant of AlInGa N can be deduced from chemical composition using Vegard's law, indicat ing solid solution in the grown quaternary films. (C) 1996 American In stitute of Physics.