We report on the deposition of Al(y)In(x)Gal(1-x-y)N in the (0<y<0.15)
and (0<x<0.14) composition range by metalorganic chemical vapor depos
ition. AlInGaN quaternary alloys offer lattice-matched platform for In
GaN-based light emitting heterostructure devices. Epitaxial growth of
AlInGaN on (0001) sapphire substrates has been achieved at 750 degrees
C. Alloy composition, lattice constants, and band gaps were obtained
by energy dispersive spectroscopy, x-ray diffraction, and room tempera
ture FL. Band edge emissions dominate the PL spectra of these quaterna
ry films. Preliminary data suggest that the lattice constant of AlInGa
N can be deduced from chemical composition using Vegard's law, indicat
ing solid solution in the grown quaternary films. (C) 1996 American In
stitute of Physics.