We have measured photon emission from individual luminescent states in
GaInP/InP heterostructures, containing InP dots, using local injectio
n from a scanning tunneling microscope tip. By changing the tip-sample
bias we are able to see the Stark shift of the emission peaks, as wel
l as the onset of impact ionization. We find that the exciton diffusio
n length is about 1 mu m, while the minority carrier diffusion length
is much less in our samples. Below the threshold for impact ionization
the excitation is extremely local, limiting the excitation to one or
a few quantum dots. (C) 1996 American Institute of Physics.