ELECTROABSORPTION FIELD IMAGING BETWEEN COPLANAR METAL CONTACTS ON SEMIINSULATING SEMICONDUCTOR EPILAYERS

Citation
Dd. Nolte et al., ELECTROABSORPTION FIELD IMAGING BETWEEN COPLANAR METAL CONTACTS ON SEMIINSULATING SEMICONDUCTOR EPILAYERS, Applied physics letters, 68(1), 1996, pp. 72-74
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
1
Year of publication
1996
Pages
72 - 74
Database
ISI
SICI code
0003-6951(1996)68:1<72:EFIBCM>2.0.ZU;2-Q
Abstract
We use excitonic electroabsorption field imaging to study the electric field distribution between coplanar gold Schottky contacts on semi-in sulating photorefractive AlGaAs epilayers. The field imaging shows con sistently large localized enhancements of the electric field adjacent to the anode, followed by a region of reduced held. Complex behavior o ccurs at the cathode, with high-field regions extending far from the c ontact. These inhomogeneous near-contact field profiles are determined by the superposition of both diffused and drifted charge which affect the performance of many optoelectronic devices that use planar contac ts or striplines on semi-insulating substrates. (C) 1996 American Inst itute of Physics.