HYDROSTATIC-PRESSURE DEPENDENCE OF THE PHOTOLUMINESCENCE OF SI NANOCRYSTALS IN SIO2

We have measured the hydrostatic pressure dependence of the photolumin escence (PL) of Si nanocrystals in SiO2 layers at room temperature and at pressures up to 50 kbar. The samples were fabricated by ion implan tation and subsequent annealing. For the two samples measured, negativ e pressure coefficients of -0.4 and -0.6 meV/kbar were obtained. These values are not in good quantitative agreement with an estimate based on the quantum confinement model. Possible implications of this disagr eement are discussed. (C) 1996 American Institute of Physics.