STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM WELLS FOR 1.3 MU-M WAVE-GUIDE MODULATORS/

We show that high-quality strain-compensated InAsxP1-x/Ga(y)ln(1-y)P m ultiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy (GSMBE) on InP substrates. Very sharp satellite peaks in doub le-crystal, x-ray diffraction are obtained from a p-i-n waveguide stru cture consisting of 21 periods of 93 Angstrom/135 Angstrom InAs0.4P0.6 /Ga0.13In0.87P MQWS. The surface-normal electroabsorption exhibits a s ignificant quantum-confined Stark effect (QCSE) near 1.3 mu m waveleng th with a field-dependent absorption coefficient change of 6000 cm(-1) and a very small zero-bias residual absorption. Electroabsorption wav eguide modulators fabricated using similar material exhibit a large op tical saturation threshold in excess of 10 mW incident optical power a t 32 meV detuning energy. (C) 1996 American Institute of Physics.