HIGH-RESOLUTION FOWLER-NORDHEIM FIELD-EMISSION MAPS OF THIN SILICON-OXIDE LAYERS

Authors
RUSKELL TG WORKMAN RK CHEN D SARID D DAHL S GILBERT S
Citation
Tg. Ruskell et al., HIGH-RESOLUTION FOWLER-NORDHEIM FIELD-EMISSION MAPS OF THIN SILICON-OXIDE LAYERS, Applied physics letters, 68(1), 1996, pp. 93-95
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
1
Year of publication
1996
Pages
93 - 95
Database
ISI
SICI code
0003-6951(1996)68:1<93:HFFMOT>2.0.ZU;2-R
Abstract
An improved method for characterizing thin oxide films using Fowler-No rdheim field emission is reported. The method uses a conducting-tip at omic force microscope with dual feedback systems, one for the topograp hy and a second for the field emission bias voltage. Images of the vol tage required to maintain a 10 pA emission current through a 3 nm oxid e film thermally grown on p-type Si(100) demonstrate a spatial resolut ion of 8 nm. (C) 1996 American Institute of Physics.