HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/

We have developed low pressure metal-organic chemical vapour depositio n technology for the growth of aluminium-free InGaAsP compounds lattic e-matched to GaAs substrate. High power laser diodes based on these ma terials and emitting at 808 nm and 890 nm wavelengths have been fabric ated and optimized. A threshold current density of 240 A cm(-2), diffe rential efficiency of 1.3 W A(-1), characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-contin uous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetim e in excess of 100 years) and they are suitable for a broad range of p umping applications.