REACTIVE ION ETCHED QUANTUM-WIRE STRUCTURES FOR LASER APPLICATIONS

This work presents the results of an investigation of the properties o f high quality InGaAs-GaAs strained quantum well wire (QWW) structures fabricated by means of the optimized reactive ion etching technique f ollowed by special sample treatment and metallorganic chemical vapor d eposition overgrowth. Both photoluminescence (PL) and electroluminesce nce features were studied. The one-dimensional nature of electron-hole gas in fabricated QWWs was proved by the observation of blue shift an d polarization anisotropy of PL emission lines. High efficiency of QWW luminescence was demonstrated by comparison of integrated PL intensit y of QWWs with that of an unpatterned reference quantum well sample. T he electro-optical properties of QWW laser structures was found to be strongly dependent on the carrier capture process, which, in turn, is determined to a great extent by the quality of the regrowth interface.