NOISE CHARACTERISTICS OF ELECTRO-ABSORPTIVE LOGIC DEVICE UTILIZING ASYMMETRIC FABRY-PEROT ETALON STRUCTURE IN HIGH OPTICAL POWER

Citation
Ok. Kwon et al., NOISE CHARACTERISTICS OF ELECTRO-ABSORPTIVE LOGIC DEVICE UTILIZING ASYMMETRIC FABRY-PEROT ETALON STRUCTURE IN HIGH OPTICAL POWER, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 64-67
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
35
Issue
1-3
Year of publication
1995
Pages
64 - 67
Database
ISI
SICI code
0921-5107(1995)35:1-3<64:NCOELD>2.0.ZU;2-Y
Abstract
We studied the noise characteristics of a symmetric self electro-optic effect device (S-SEED) with an impedance-matched asymmetric Fabry-Per ot cavity and extremely shallow quantum wells (AE-SEED). The device Ch aracteristics such as the signal tolerance and the bitrate in cascaded optical logic gates are determined by the parameters including the re flection change Delta R and the contrast ratio CR during the high powe r operation. The noise characteristics of an AE-SEED were compared wit h that of a conventional E-SEED. When there was no power fluctuation i n the reading beam, the conventional E-SEED showed a higher bitrate. H owever, when fluctuation was introduced, as is inevitable in the real world, the performance of the AE-SEED as a logic gate was much better and showed higher a bitrate than the E-SEED.