K. Yoshino et al., TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN ZNSE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 68-71
As-grown ZnSe and RbCl- and CsCl-doped ZnSe single crystals are grown
by a sublimination method. The temperature dependence of the photolumi
nescence (PL) spectra in the blue emission region is measured from 4.2
K to 300 K. The emission band is observed in RbCl- and CsCl-doped ZnS
e from 4.2 K to 300 K. In as-grown and Zn-annealed ZnSe, the emission
band undergoes considerable attenuation at 100 K. However, the emissio
n band is clearly observed in Se-annealed ZnSe up to near room tempera
ture. These results prove that the disappearance of Se vacancies enhan
ces room temperature PL.