ANALYSIS OF REACTION GASES FLOW IN CVD PROCESSES

The relation between the deposition rate of the films and the velocity distribution in the flow field is investigated in detail. The thin Si N films are deposited on Si substrates by the infrared thermal chemica l vapor deposition (CVD) at 600 degrees C, flux ratio (NH3/Si2H6) of 5 0 and 800 and total pressure of 2 and 10 Torr. Velocity, pressure, tem perature and vorticity distributions in a flow past a plate are calcul ated numerically at 600 degrees C and Reynolds number (Re) of 1, 10, 4 0 and 100. From the results it is shown that the deposited film thickn ess distribution agrees fairly well with the vorticity distribution. T he fact suggests that vorticity has a potent influence on film deposit ion.