GROWTH AND CHARACTERIZATION OF STRAIN-COMPENSATED INASP GAINP AND INGAAS/GAINP MULTIPLE-QUANTUM WELLS/

Authors
TU CW MEI XB YAN CH BI WG
Citation
Cw. Tu et al., GROWTH AND CHARACTERIZATION OF STRAIN-COMPENSATED INASP GAINP AND INGAAS/GAINP MULTIPLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 166-170
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
35
Issue
1-3
Year of publication
1995
Pages
166 - 170
Database
ISI
SICI code
0921-5107(1995)35:1-3<166:GACOSI>2.0.ZU;2-2
Abstract
We have shown that strain compensation is effective in increasing the critical layer thickness or the critical number of periods in a multip le quantum well (MQW) structure and in improving thermal stability. Co mpared with a strain-uncompensated InAs0.4P0.6/InP MQW (1.3% strain) o n InP substrates, strain-compensated InAs0.4P0.6/GayIn1-yP MQW in a p- i-n structure exhibits superior structural and optical properties, esp ecially electroabsorption characteristics that is suitable for modulat or applications at 1.3 mu m. Strain-compensated In0.3Ga0.7As/GayIn1-yP MQWs on GaAs substrates exhibit better photoluminescence properties a nd are shown to be more thermally stable.