ATOMIC-SCALE CHARACTERIZATION OF INTERFACES IN THE GAAS ALGAAS SUPERLATTICES/

Authors
PUSEP YA DASILVA SW GALZERANI JC LUBYSHEV DI BASMAJI P MILEKHIN AG PREOBRAZHENSKII VV SEMYAGIN BR MARAHOVKA II
Citation
Ya. Pusep et al., ATOMIC-SCALE CHARACTERIZATION OF INTERFACES IN THE GAAS ALGAAS SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 180-183
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
35
Issue
1-3
Year of publication
1995
Pages
180 - 183
Database
ISI
SICI code
0921-5107(1995)35:1-3<180:ACOIIT>2.0.ZU;2-M
Abstract
We present a new interpretation of the Raman spectra of GaAs/AlAs ultr athin-layer superlattices based on the microscopic analysis of the opt ical vibrational modes. The difference between normal and inverted int erfaces is responsible for the lack of the inversion symmetry of the l ayers with respect to the central plane, therefore confined modes can no longer be considered as even or odd ones. All the optical vibration al modes, independently of their quantum index, are now active in Rama n scattering.