SPONTANEOUS ANISOTROPIC CHEMICAL ETCHING AS A NANOSTRUCTURE SURFACE MODIFICATION METHOD FOR THE A(III)B(V) SEMICONDUCTORS

The morphology and physical peculiarity of the A(III)B(V) semiconducto r (GaAs, InAs, InSb, InP) surfaces and their modification by spontaneo us anisotropic chemical etching was investigated. Spontaneous anisotro pic chemical etching is a local heterogeneous process which converts m irror flat surfaces of semiconductors into rough and black ones with h abitus (natural) shape frame, and with a high de ree of homogeneity of properties. The possibility of producing microrelief surfaces of semi conductors with controlled optical, electrophysical and photoelectric properties have been shown. The materials were investigated by various techniques: photoluminescence, Auger spectra, and scanning electron m icroscope analysis. The results of applying the nanostructure surface modification method to improve photodetector characteristics (sensitiv ity and spectral region) have been presented.