CHARACTERIZATION OF NI GE/AU/NI/AU CONTACT METALLIZATION ON ALGAAS/INGAAS HETEROSTRUCTURES FOR PSEUDOMORPHIC HETEROJUNCTION FIELD-EFFECT TRANSISTOR APPLICATION/

Authors
LEE HJ TSE MS RADHAKRISHNAN K PRASAD K WENG J YOON SF ZHOU X TAN HS
Citation
Hj. Lee et al., CHARACTERIZATION OF NI GE/AU/NI/AU CONTACT METALLIZATION ON ALGAAS/INGAAS HETEROSTRUCTURES FOR PSEUDOMORPHIC HETEROJUNCTION FIELD-EFFECT TRANSISTOR APPLICATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 234-238
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
35
Issue
1-3
Year of publication
1995
Pages
234 - 238
Database
ISI
SICI code
0921-5107(1995)35:1-3<234:CONGCM>2.0.ZU;2-S
Abstract
We have studied the effect of the Ge-to-Ni ratio on the contact resist ance of the Ni/Ge/Au/Ni/Au contact metallization for GaAs/AlxGa1-xAs/I nyGa1-yAs heterostructures used for pseudomorphic heterojunction field effect transistors (HFETs). An optimal atomic ratio of Ge to Ni of ar ound 1.0 is observed to yield a smooth surface morphology with low con tact resistance suitable for AlxGa1-xAs/InyGa1-yAs HFET fabrication.