Jr. Leite et al., ELECTRICAL-CONDUCTIVITY OF DELTA-DOPING SUPERLATTICES PARALLEL TO THEGROWTH DIRECTION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 250-255
The electrical conductivity sigma has been calculated for n-type delta
doping GaAs superlattices (SLs) in a direction perpendicular to the l
ayers. The transport along the SL growth direction is investigated by
first performing self-consistent calculations of the miniband structur
e as a function of the SLs' periods d and the sheet doping concentrati
ons N-D. The Schrodinger equation, with the appropriate periodic bound
ary condition, coupled to the Poisson equation are self-consistently s
olved within the framework of the local density functional approximati
on for the electron exchange-correlation effects. Assuming that the tr
ansport in the SL occurs through extended miniband states, sigma is ca
lculated at zero temperature and low field ohmic limits by the quasi-c
lassical Boltzmann kinetic equation. Using semiquantitative arguments
we have shown recently that the particular miniband structure of the d
elta doping SLs leads to a plateau-like behaviour of sigma as a functi
on of the Fermi level position or of the donor concentration. In the p
resent work numerical values of sigma are presented.