ELECTRON-MOBILITY IN LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE

We investigated theoretically the electron mobility in low temperature grown GaAs (LT GaAs), based on the 'internal Schottky barrier' model, utilizing a Monte Carlo method. We used a novel approach to overcome the problem of inhomogeneity of the internal electric field due to the presence of precipitates. The behaviour of mobility as a function of temperature in LT GaAs for precipitate concentrations in the range 10( 15)-10(17) cm(-3) is presented. This is the first result of mobility c alculation in LT GaAs, based on the Monte Carlo method, reported to da te. The dependence of mobility on the doping concentration is also pre sented.